Linde LienHwa (LLH) will debut its SPECTRA® EM line of electronic materials at the SEMICON Taiwan tradeshow in Taipei, Taiwan (5th to 7th September).
The new product line from LHH has been introduced to meet the growing demand of Taiwanese and regional customers in the semiconductor and display industries.
The initial products included in the SPECTRA EM family include perfluoropropane (C3F8), tetrafluoromethane (CF4), octafluorocyclobutane (C4F8), carbon monoxide (CO), fluorine/nitrogen (F2/N2) mixtures, hydrogen bromide (HBr), hexachlorodisilane (HCDS), nitrogen trifluoride (NF3) and sulfur hexafluoride (SF6).
“These products exemplify our commitment to quality, expertise and partnership,” Alex Tong, president of Linde LienHwa, said. “Over the past three years, we have executed on our strategy to localize production and know-how of electronic special gases to best serve our customers. The SPECTRA EM portfolio delivers on our promise for the highest quality available products.”
LHH, a joint venture of LienHwa Industrial Corp and The Linde Group, has recently commissioned production of two of the newest SPECTRA EM products.
Utilising fluorine generation technology developed by JV partner Linde, LHH has expanded production at its Guanyin, Taiwan location to offer fluorine mixes.
Fluorine is a highly reactive gas and is combined into a 20% blend with nitrogen to yield a mixture that is safe for compression, packaging and transport. Linde also uses this technology to supply customers in the United States. The fluorine mixtures are used to clean semiconductor manufacturing equipment.
In Tianjin, China, Linde LienHwa has invested to create a new source of electronics-grade hydrogen bromide (HBr) for customers in mainland China, Taiwan and throughout the APAC region.
HBr is a compressed gas that is used as a selective etchant, allowing semiconductor manufacturers to remove one material while leaving a second material untouched. This process has become increasingly important as leading-edge chip manufacturers produce 3D structures to make transistors smaller, faster and use less power.