MATHESON, together with its parent company, Taiyo Nippon Sanso Corporation (TNSC), announced today that Sandia National Laboratories, has qualified and accepted the SR-4000HT commercial grade gallium nitride (GaN) metal organic chemical vapor deposition (MOCVD) system for its continued compound semiconductor device developmental work with aluminum gallium nitride (AlGaN) and aluminum nitride (AlN).

The order for the MOCVD system was first placed late in 2014. At the time, Jeffrey Fiegel of Sandia’s technical staff, commented, “We evaluated several different supplier systems and platforms for our needs through our rigorous competitive bidding process and, in the end, we found that the SR-4000HT best met our technical specifications. Its capability to grow atmospheric AlGaN layers with a high growth rate will improve the efficiency of our device development efforts, as well as, we believe, produce higher quality materials.”

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“As a prominent leading national institution, this customer’s qualification and acceptance of the SR-4000HT MOCVD system is a significant step forward for the entire MOCVD market focused on AlGaN and AlN technology,” said TNSC Executive Corporate Officer Koh Matsumoto.

The platform

MATHESON and TNSC strongly expect the SR-4000HT MOCVD system to be the platform for AlGaN and AlN applications. The two companies are determined to continue advancement into the deep ultra violet light emitting diode (UVC-LED) and power electronics global market with this MOCVD system.

In March, MATHESON and TNSC installed a SR-4000HT system at the University of California in Santa Barbara.