Elpida Memory, a major semiconductor producer, recently announced the establishment of a new DRAM fabrication plant as a joint venture with Powerchip Semiconductor (PSC), a semiconductor giant in Taiwan.

The total amount of investment for both companies came to ¥1,600bn. The companies estimate that operations for the 300mm wafer production line of PSC, currently under construction, will be due to complete at the end of 2007.

The new production base, under construction in HouLi Science Park in Taichung, Taiwan, is assumed to produce a maximum of 240,000 silicon wafers a month.

Elpida memory sets Hiroshima as its production base for DRAM. Its capacity is 60,000 a month of 300mm wafer. They are accelerating a plan to expand its production capacity to 100,000 a month by the end of 2008.

Thanks to this establishment of the new facility in Taiwan, the companies are expecting that their production capacity will come to over 300,000 a month as a total.

At the same time the capacity of N2 onsite using at Hiroshime Elpida Memory is supposed to reach a 20,000 m3/h level currency, this investment for the new facility aiming at having 2.4 times production capacity connects to a potential to generate new demand of 60,000 m3/h class of gases.

Also in terms of specialty gases and gas related equipment, the battles to obtain right to supply will be the biggest in the world in 2007.