For semiconductor manufacturers looking for a sub-atmospheric dopant gas source that will deliver high performance at a lower cost, Linde North America has introduced the answer – its Genii™ Sub-Atmospheric Gas Sources.
The new Linde ion implantation gas sources use chemical complexing or electrochemical generation as a means to achieve the desired performance characteristics required by integrated circuit (IC) manufacturers.
Ion implantation is a critical step in the manufacture of integrated circuits; it is the method of introducing doping gases such as arsine, phosphine and boron trifluoride, to the silicon substrate. IC manufacturers prefer using dopants in sub-atmospheric pressure cylinders because of the inherent safety compared with higher pressure alternatives.
To that end, Linde is offering two technologies in the Genii dopant line. One generates arsine at sub-atmospheric pressure from an electrochemical generator housed in the cylinder. The second delivers enriched boron trifluoride or phosphine through chemical complexing with ionic liquids contained in the cylinder.
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