MATHESON, together with its parent company, Taiyo Nippon Sanso Corporation (TNSC), announced today that Sandia National Laboratories, has qualified and accepted the SR-4000HT commercial grade gallium nitride (GaN) metal organic chemical vapor deposition (MOCVD) system for its continued compound semiconductor device developmental work with aluminum gallium nitride (AlGaN) and aluminum nitride (AlN).
The order for the MOCVD system was first placed late in 2014. At the time, Jeffrey Fiegel of Sandia’s technical staff, commented, “We evaluated several different supplier systems and platforms for our needs through our rigorous competitive bidding process and, in the end, we found that the SR-4000HT best met our technical specifications. Its capability to grow atmospheric AlGaN layers with a high growth rate will improve the efficiency of our device development efforts, as well as, we believe, produce higher quality materials.”
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