The exposure device for the next-generation lithography technology for semiconductors, i.e. extreme ultraviolet lithography (EUV lithography or EUVL) technology, appears to use large quantities of hydrogen, reports The Gas Review.
For the EUVL exposure device, a flow of large quantities of hydrogen is used as the atmosphere gas around the tin droplets when a CO2 or YAG (Yttrium, Aluminium and Garnet) laser is irradiated to dissolved tin (Sn) droplets to generate ultrafine EUV light.
It is estimated that over 100,000m3 of hydrogen will be consumed each month. It is also possible that hydrogen radicals will be used to clean the EUVL exposure device.
LPP method will use large quantities of hydrogen
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