MATHESON Tri-Gas, Inc. and parent company Taiyo Nippon Sanso Corporation have announced that the Solid State Lighting & Energy Electronics Center (SSLEEC), the world renowned research center at the University of California, Santa Barbara, installed an SR-4000HT grade gallium nitride (GaN) metal organic chemical vapor deposition (MOCVD) reactor.
The MOCVD reactor will provide for continued compound semiconductor device developmental work for Deep Ultra Violet Light Emitting Diode (UVCLED).
SSLEEC is co-directed by Nobel Prize-winning Professor Shuji Nakamura and Professor Steven DenBaars.
According to Professor Nakamura, “We have already obtained preliminary growth results which demonstrate the unrivaled performance of the SR-4000HT reactor.”
“Our students and faculty members are very excited by these results. We look forward to using the MOCVD reactor from TNSC to grow the high quality III-Nitride-based materials and devices.”
High-aluminum content devices
The unique design of the SR-4000HT assists in growing high-aluminum content devices at high growth rates, while operating at higher than 40kPa pressures and elevated temperatures.
Koh Matsumoto, CSE Division Manager, TNSC, stated, “We are proud that UCSB has chosen our reactor for their advanced research.”
“We believe that the designed features of our reactor, which enable well-controlled vapor phase reactions, will allow UCSB to enjoy a large process window to develop their devices.”